BC328 Datasheet

The BC328 is a PNP EPITAXIAL SILICON TRANSISTOR.

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Part NumberBC328
ManufacturerFairchild Semiconductor
Overview BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxi. IC= -10mA, IB=0 Min. -45 -25 IC= -0.1mA, VBE=0 -50 -30 IE= -10µA, IC=0 VCE= -45V, VBE=0 VCE= -25V, VBE=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA, f=20MHz VCB= -10V, IE=0, f=1MHz 100 12 100 40 -5 -2 -2 -100 -100 630 -0.7 -1.2 V V MHz pF.
Part NumberBC328
DescriptionAmplifier Transistors
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC327/D Amplifier Transistors PNP Silicon COLLECTOR 1 BC327,-16,-25 BC328,-16,-25 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol B. ter Breakdown Voltage (IC =
*100 µA, IE = 0) BC327 BC328 V(BR)CES Emitter
* Base Breakdown Voltage (IE =
*10 mA, IC = 0) Collector Cutoff Current (VCB =
*30 V, IE = 0) (VCB =
*20 V, IE = 0) Collector Cutoff Current (VCE =
*45 V, VBE = 0) (VCE =
*25 V, VBE = 0) Emitter Cutoff Current (VEB =
*4.0 V.
Part NumberBC328
DescriptionSmall Signal Transistors
ManufacturerGeneral Semiconductor
Overview BC327, BC328 Small Signal Transistors (PNP) TO-92 .181 (4.6) .142 (3.6) min..492 (12.5) .181 (4.6) max.∅ .022 (0.55) .098 (2.5) CE B Dimensions in inches and (millimeters) FEATURES ♦ PNP Silicon .
* PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit-able for AF-driver stages and low-power output stages.
* These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the.
Part NumberBC328
DescriptionEPITAXIAL PLANAR PNP TRANSISTOR
ManufacturerKEC
Overview SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA). For Complementary with NPN type . High Current : IC=-800mA. DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA). For Complementary with NPN type BC338. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation J.

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