| Part Number | BC337-40 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | BC337-25 ® BC337-40 Type BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Marking BC337-25 BC337-40 s SILICON EPITAXIAL PLANAR NPN TRANSISTORS s TO-92 PACKAGE SUITABLE FOR THROUGH-. oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut-off Current (IC = 0) Collector-Base Breakdown . |
BC337-40 Datasheet and Specifications PDF
The BC337-40 is a SMALL SIGNAL NPN TRANSISTORS.
| Part Number | BC337-40 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Taiwan Semiconductor |
| Overview | Green compound Green compound Green compound Green compound Document Number: DS_S1407004 Version: B14 Small Signal Product PACKAGE OUTLINE DIMENSIONS TO-92 Bulk BC337-16/25/40 thru BC338-16/25/40 . - For switching and AF amplifier applications - These types are subdivided into three groups -16, -25 and -40, according to their current gain - Moisture sensitivity level 1 - Driver transistor - Pb free and RoHS complian - Green compound (Halogen free) with suffix "G" on packing code and prefix "G". |
| Part Number | BC337-40 Datasheet |
|---|---|
| Description | Amplifier Transistors |
| Manufacturer | onsemi |
| Overview |
BC337, BC337-25, BC337-40
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Co.
* These are Pb *Free Devices MAXIMUM RATINGS Rating Collector * Emitter Voltage Collector * Base Voltage Emitter * Base Voltage Collector Current * Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 45 50 5.0 800 625 5.0 Unit Vdc Vdc Vdc mAdc mW m. |
| Part Number | BC337-40 Datasheet |
|---|---|
| Description | NPN Silicon AF Transistors |
| Manufacturer | Siemens Semiconductor Group |
| Overview | NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP) BC 337 BC 338 2 3 1 Type BC 337 BC 337-. mA mW ˚C Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 337 BC 338 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdow. |