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BC546B Datasheet

The BC546B is a Amplifier Transistors. Download the datasheet PDF and view key features and specifications below.

Part NumberBC546B
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC546/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC546, B BC547, A, B, C BC548, A, B, C MAXIMUM RATINGS Rating C. 1.0 mA, IB = 0) Collector
* Base Breakdown Voltage (IC = 100 µAdc) Emitter
* Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125°C) BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC5.
Part NumberBC546B
DescriptionGeneral Purpose NPN Transistors
ManufacturerDiotec Semiconductor
Overview BC546 ... BC549 BC546 ... BC549 General Purpose NPN Transistors Universal-NPN-Transistoren IC = 100 mA hFE ~ 110/200/420 Tjmax = 150°C VCEO = 30...65 V Ptot = 500 mW Version 2018-02-01 16 9 18 T. General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) WEEE Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen RoHS Pb ELV Konform zu RoHS, .
Part NumberBC546B
DescriptionAmplifier Transistors
Manufactureronsemi
Overview Amplifier Transistors NPN Silicon BC546B, BC547A, B, C, BC548B, C Features • Pb−Free Packages are Available* DATA SHEET COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Collector .
* Pb
*Free Packages are Available* DATA SHEET www.onsemi.com COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Collector - Emitter Voltage Symbol Value Unit VCEO Vdc BC546 65 BC547 45 BC548 30 Collector - Base Voltage VCBO Vdc BC546 80 BC547 50 BC548 30 Emitter - Base Voltage.
Part NumberBC546B
DescriptionNPN Transistor
ManufacturerPanJit Semiconductor
Overview BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Complimentary (PNP) device.
* NPN epitaxial silicon, planar design
* Collector current IC = 100mA
* Complimentary (PNP) device:BC556,BC557,BC558 Series
* Pb free product :99% Sn above can meet RoHS environment substance directive request MECHANICAL DATA
* Case: TO-92
* Terminals: Solderable per MIL-STD-202, Method 208
* Appro.

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