| Part Number | BC818-16W Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview |
NPN transistor in a SOT323 plastic package. PNP complement: BC807W. MARKING TYPE NUMBER BC817W BC817-16W BC817-25W BC817-40W Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING .
* High current (max. 500 mA) * Low voltage (max. 45 V). APPLICATIONS * General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. MARKING TYPE NUMBER BC817W BC817-16W BC817-25W BC817-40W Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made. |
BC818-16W Datasheet PDF
The BC818-16W is a NPN general purpose transistor.
| Part Number | BC818-16W Datasheet |
|---|---|
| Description | NPN Silicon AF Transistors |
| Manufacturer | Infineon |
| Overview | BC817W, BC818W NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (P. Nov-29-2001 BC817W, BC818W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC. |
| Part Number | BC818-16W Datasheet |
|---|---|
| Description | SMD General Purpose NPN Transistors |
| Manufacturer | Diotec Semiconductor |
| Overview | BC817W ... BC818W BC817W ... BC818W SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 500 mA hFE ~ 180/290/520 Tjmax = 150°C VCES = 30...50 V Ptot = 200 mW Version 2017-02-06. General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen RoHS Pb Konform zu RoHS, REACH, Konfliktmineralien 1 WEEE Mechanische Daten 1) 3000 / 7“ Gegurtet au. |
| Part Number | BC818-16W Datasheet |
|---|---|
| Description | NPN Silicon AF Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W (PNP) . C K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Dec-19-1996 BC 817-16W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. . |