| Part Number | BC818-40 Datasheet |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| Overview |
Production specification
NPN General Purpose Amplifier
FEATURES
For general AF application. Complementary PNP type available
BC808. High collector current, high current gain. Low collector-e.
* For general AF application. * Complementary PNP type available BC808. * High collector current, high current gain. * Low collector-emitter saturation voltage. Pb Lead-free BC818 APPLICATIONS * General purpose medium power amplifier. ORDERING INFORMATION Type No. Marking BC818-16 BC818-25 BC. |
BC818-40 Datasheet PDF
The BC818-40 is a NPN General Purpose Amplifier.
| Part Number | BC818-40 Datasheet |
|---|---|
| Description | SMD General Purpose NPN Transistors |
| Manufacturer | Diotec Semiconductor |
| Overview | BC817 ... BC818 BC817 ... BC818 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 800 mA hFE ~ 160/250/400 Tjmax = 150°C VCES = 30...50 V Ptot = 310 mW Version 2017-08-15 SO. General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Weight approx. Case material Solder & assembly conditions Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen RoHS Pb Konform zu RoHS, REACH, Konfliktminera. |
| Part Number | BC818-40 Datasheet |
|---|---|
| Description | NPN Silicon AF Transistors |
| Manufacturer | Infineon |
| Overview | BC817, BC818 NPN Silicon AF Transistors 3 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807, BC808 (PN. 817, BC818 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cuto. |
| Part Number | BC818-40 Datasheet |
|---|---|
| Description | SILICON NPN TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKI. (BC817) 45 BVCEO IC=10mA (BC818) 25 BVEBO IE=1.0μA 5.0 VCE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=1.0V, IC=500mA fT VCE=5.0V, IC=10mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz 10 MAX 100 5.0 100 0.7 1.2 UNITS nA μA nA V V V V V V V MHz pF BC817 BC817-16 BC817-25 BC817-40 BC818 BC8. |