BC848BWT1 Datasheet
BC848BWT1 Datasheet (Motorola Semiconductor)
Motorola Semiconductor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846AWT1/D General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are.
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
* Emitter Breakdown Voltage (IC = 10 mA) Collector
* Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Col.
BC848BWT1 Datasheet (WILLAS)
WILLAS
WILLAS BC846A/BWFTM1 120-M+ BC847A/B/CWTT1HRU 1.0GA SeUnRFeACrEaMl OPUuNTrpSCoHOsTeTKTYrBaARnRsIEiRsRtEoCrTsIFIERS -20V- 2B00CV 848A/B/CFWMT11200-M+ SOD-123+ PACKAGE Pb Free Product NPN•FBeSataci.
oAdTucINt fGorSpacking code suffix "G"
Halogen free product for packing code suffix "H"
MecRhatiangnical data Symbol BC846 BC847 BC848 Unit
C
*oEllepcotoxry
*:EUmLit9te4r-VVo0ltaragteed flameVreCtEaOrdant 65 45 30
V
0.040(1.0) 0.024(0.6)
C
*oClleacstoer
*: BMaosledeVdoltpalgaestic, SOD-1V2C3BHO
8.