| Part Number | BC857B |
|---|---|
| Manufacturer | PanJit Semiconductor |
| Overview | BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER 225 mW SOT- 23 FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector . General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series Pb free product are available : 99% Sn above can meet RoHS environment substance directive request .056(1.40) .047(1.20) .119(3.00. |
BC857B Datasheet
The BC857B is a PNP Transistor.
| Part Number | BC857B |
|---|---|
| Description | PNP General Purpose Amplifier |
| Manufacturer | Fairchild Semiconductor |
| Overview | BC857A / BC857B / BC857C BC857A BC857B BC857C C E SOT-23 Mark: 3E / 3F / 3G B PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector current. e 25°C Thermal Resistance, Junction to Ambient Max *BC857A / B / C 350 2.8 357 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. ã 1997 Fairchild Semiconductor Corporation BC857A / BC857B / BC857C PNP General Purpose Amplifier (continued) Electrical Characteristics Symbo. |
| Part Number | BC857B |
|---|---|
| Description | SMALL SIGNAL PNP TRANSISTORS |
| Manufacturer | STMicroelectronics |
| Overview | ® BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type BC857B Marking 3F s SILICON EPITAXIAL PLANAR PNP TRANSISTOR )s MINIATURE SOT-23 PLASTIC PACKAGE t(sFOR SURFACE MOUNTING CIRCUITS cs TAPE. area of 1 cm2. Max 500 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = -30 V VCB = -30 V TC = 150 oC -1 -15 nA -5 µA IEBO Emitter Cut-off Current VEB = -5 V -10. |
| Part Number | BC857B |
|---|---|
| Description | SURFACE MOUNT PNP SILICON TRANSISTOR |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series devices are silicon PNP transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general. OL TEST CONDITIONS MIN TYP ICBO VCB=30V ICBO VCB=30V, TA=150°C IEBO VEB=5.0V BVCBO IC=10µA (BC856) 80 BVCBO IC=10µA (BC857) 50 BVCBO IC=10µA (BC858) 30 BVCEO IC=10mA (BC856) 65 BVCEO IC=10mA (BC857) 45 BVCEO IC=10mA (BC858) 30 BVEBO IE=1.0µA 5.0 VCE(SAT) IC=10mA, IB=0.5. |