| Part Number | BC857S Datasheet |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| Overview |
Production specification
Dual PNP Small Signal Surface Mount Transistor
FEATURES
Epitaxial planar die construction. Complementary NPN type available
BC847S. Ultra-small surface mount package.
.
* Epitaxial planar die construction. * Complementary NPN type available BC847S. * Ultra-small surface mount package. Pb Lead-free BC857S APPLICATIONS * For Low power amplification and switching. ORDERING INFORMATION Type No. Marking BC857S 3C SOT-363 Package Code SOT-363 MAXIMUM RATING @ T. |
BC857S Datasheet and Specifications PDF
The BC857S is a Dual PNP Small Signal Surface Mount Transistor.
Key Specifications
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 6 |
| Max Frequency | 250 MHz |
| Height | 800 µm |
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temp | 150 °C |
| Part Number | BC857S Datasheet |
|---|---|
| Description | PNP Transistors |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type PNP Transistors BC857S (KC857S) Transistors Ƶ Features ƽ High current gain ƽ Low collector-emitter saturation voltage ƽ For AF input stages and driver applications Ƶ Absolute Maximum Rati. ƽ High current gain ƽ Low collector-emitter saturation voltage ƽ For AF input stages and driver applications Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation -Derate . |
| Part Number | BC857S Datasheet |
|---|---|
| Description | PNP Silicon AF Transistor |
| Manufacturer | Infineon |
| Overview | PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistor with good ma. . |
| Part Number | BC857S Datasheet |
|---|---|
| Description | Dual PNP Transistor |
| Manufacturer | Good-Ark Semiconductor |
| Overview |
BC857S Dual PNP Transistor
Features
■ Dual PNP transistors in one single package ■ No mutual interference between the transistors
Absolute Maximum Ratings (TA = 25 °C unless otherwise noted)
Parame.
* Dual PNP transistors in one single package * No mutual interference between the transistors Absolute Maximum Ratings (TA = 25 °C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 . |