BC858C Datasheet

The BC858C is a SURFACE MOUNT PNP SILICON TRANSISTOR.

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Part NumberBC858C
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series devices are silicon PNP transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general. OL TEST CONDITIONS MIN TYP ICBO VCB=30V ICBO VCB=30V, TA=150°C IEBO VEB=5.0V BVCBO IC=10µA (BC856) 80 BVCBO IC=10µA (BC857) 50 BVCBO IC=10µA (BC858) 30 BVCEO IC=10mA (BC856) 65 BVCEO IC=10mA (BC857) 45 BVCEO IC=10mA (BC858) 30 BVEBO IE=1.0µA 5.0 VCE(SAT) IC=10mA, IB=0.5.
Part NumberBC858C
DescriptionPNP Transistor
ManufacturerPanJit Semiconductor
Overview BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER 225 mW SOT- 23 FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector . General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series Pb free product are available : 99% Sn above can meet RoHS environment substance directive request .056(1.40) .047(1.20) .119(3.00.
Part NumberBC858C
DescriptionPNP Transistor
ManufacturerGalaxy Microelectronics
Overview PNP general purpose Transistor FEATURES  Low current.(max.100mA).  Low voltage.. Pb Lead-free Production specification BC856/857/858 APPLICATIONS  General purpose switching and amplification. .
* Low current.(max.100mA).
* Low voltage.. Pb Lead-free Production specification BC856/857/858 APPLICATIONS
* General purpose switching and amplification. ORDERING INFORMATION Type No. Marking BC856A/B BC857A/B/C BC858A/B/C 3A/3B 3E/3F/3G 3J/3K/3L SOT-23 Package Code SOT-23 SOT-23 SOT-23 M.
Part NumberBC858C
DescriptionSMD General Purpose PNP Transistors
ManufacturerDiotec Semiconductor
Overview BC856 ... BC860 BC856 ... BC860 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2015-05-12 2.9 ±0.1 0.4+0.1 -0.. - VCEO - VCBO - VEBO Ptot - IC - ICM Tj TS Grenzwerte (TA = 25°C) BC856 BC857 BC860 BC858 BC859 65 V 45 V 30 V 80 V 50 V 30 V 5V 250 mW 1) 100 mA 200 mA -55
*+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain
* Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA .

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