BC860B Datasheet
BC860B Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
PNP Silicon AF Transistors BC 856 ... BC 860 Features q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kH.
q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 .
BC860B Datasheet (Diotec Semiconductor)
Diotec Semiconductor
BC856 ... BC860 BC856 ... BC860 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2015-05-12 2.9 ±0.1 0.4+0.1 -0..
- VCEO - VCBO - VEBO
Ptot - IC - ICM Tj TS
Grenzwerte (TA = 25°C)
BC856
BC857 BC860
BC858 BC859
65 V
45 V
30 V
80 V
50 V
30 V
5V
250 mW 1)
100 mA
200 mA
-55
*+150°C -55…+150°C
Characteristics (Tj = 25°C)
DC current gain
* Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
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BC860B Datasheet (LGE)
LGE
Features Low current (max. 100 mA). Low voltage (max. 45 V). +0.12.4 -0.1 BC859,BC860 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -.
Low current (max. 100 mA). Low voltage (max. 45 V). +0.12.4 -0.1 BC859,BC860 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Paramet.
BC860B Datasheet (Infineon)
Infineon
PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.
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