| Part Number | BCR10PN Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BCR 10PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Built in bias re. tics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 10 1 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 0.75 30 V 0.3 1.5 2.5 13 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hF. |
BCR10PN Datasheet and Specifications PDF
The BCR10PN is a NPN/PNP Silicon Digital Tansistor.
| Part Number | BCR10PN Datasheet |
|---|---|
| Description | NPN/PNP Silicon Digital Transistor |
| Manufacturer | Infineon |
| Overview | BCR10PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Buil. 40 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCR10PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC. |