| Part Number | BCR142W Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
BCR142...
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2 =47kΩ)
BCR142/F/L3 BCR142T/W
C 3
R1 R2
1 B
2 E
EHA07.
Tj Tstg Symbol RthJS
150 -65 * 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 °C Unit K/W 2 Aug-29-2003 BCR142 * Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 1. |
BCR142W Datasheet and Specifications PDF
The BCR142W is a NPN Silicon Digital Transistor.
Key Specifications
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BCR142W Datasheet |
|---|---|
| Description | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=47kΩ) Type BCR 142W Marking Ordering Code WZs Q62702-C2. ase breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 227 70 V 0.3 1.2 2.5 29 0.52 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.5 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1). |