| Part Number | BCR146 Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BCR 146 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=22kΩ) Type BCR 146 Marking Ordering Code WLs Q62702-C226. akdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 220 50 V 0.3 2.6 4 62 2.36 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 1.2 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10. |
BCR146 Datasheet and Specifications PDF
The BCR146 is a NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit).
Key Specifications
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 900 µm |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BCR146 Datasheet |
|---|---|
| Description | NPN Silicon Digital Transistor |
| Manufacturer | Infineon |
| Overview |
BCR146...
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2 =22kΩ)
BCR146/F/L3 BCR146T/W
C 3
R1 R2
1 B
2 E
EHA07.
Tstg Symbol RthJS
150 -65 * 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 °C Unit K/W 2 Aug-29-2003 BCR146 * Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100. |