| Part Number | BCR148S Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BCR 148S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvaniv) internal isolated Transistors driver circuit • Built in bias resistor (R. tage Values typ. max. Unit V(BR)CEO 50 47 1 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 1.5 3 62 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = . |
BCR148S Datasheet and Specifications PDF
The BCR148S is a NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit).
Key Specifications
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 6 |
| Height | 800 µm |
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BCR148S Datasheet |
|---|---|
| Description | NPN Silicon Digital Transistor |
| Manufacturer | Infineon |
| Overview | BCR148.../SEMH2 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor (R1=47kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal. CR148T, TS ≤ 109°C BCR148U, TS ≤ 118°C BCR148W, TS ≤ 124°C SEMH2, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR148 BCR148F BCR148L3 BCR148S BCR148T BCR148U BCR148W SEMH2 1For calculation of R thJA please refer to Application Note Th. |