| Part Number | BCR148W Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | BCR148.../SEMH2 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor (R1=47kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal. CR148T, TS ≤ 109°C BCR148U, TS ≤ 118°C BCR148W, TS ≤ 124°C SEMH2, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR148 BCR148F BCR148L3 BCR148S BCR148T BCR148U BCR148W SEMH2 1For calculation of R thJA please refer to Application Note Th. |
BCR148W Datasheet and Specifications PDF
The BCR148W is a NPN Silicon Digital Transistor.
Key Specifications
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 800 µm |
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BCR148W Datasheet |
|---|---|
| Description | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BCR 148W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=47kΩ) Type BCR 148W Marking Ordering Code WEs Q62702-C2. breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 1.5 3 62 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = . |