| Part Number | BCR158 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
BCR158.../SEMB10
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) inter.
rameter Junction - soldering point 1) BCR158 BCR158F BCR158L3 BCR158T BCR158W SEMB10
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 10 100 200 250 250 250 250 250 150 -65 * 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 ≤ . |
BCR158 Datasheet and Specifications PDF
The BCR158 is a PNP Silicon Digital Transistor.
Key Specifications
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 900 µm |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BCR158 Datasheet |
|---|---|
| Description | PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BCR 158 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Type BCR 158 Marking Ordering Code WIs Q62702-C23. breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 0.8 1.1 2.9 0.052 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.4 VEB = 5 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) I. |