| Part Number | BCR162 Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BCR 162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drivere circuit • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) Type BCR 162 Marking Ordering Code WUs Q62702-C. reakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 1.61 20 V 0.3 1.5 2.5 6.2 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC. |
BCR162 Datasheet and Specifications PDF
The BCR162 is a PNP Silicon Digital Transistor.
| Part Number | BCR162 Datasheet |
|---|---|
| Description | PNP Silicon Digital Transistor |
| Manufacturer | Infineon |
| Overview |
BCR162...
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 4.7kΩ )
BCR162/F/L3 BCR162T
C 3
R1 R2
1 B
2 E
.
≤ 165
°C
Unit K/W
2
Aug-29-2003
BCR162 * Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0. |