| Part Number | BCR169S Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | BCR169S PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, 4 5 6 driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package. aracteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = . |
BCR169S Datasheet and Specifications PDF
The BCR169S is a PNP Silicon Digital Transistor.
| Part Number | BCR169S Datasheet |
|---|---|
| Description | PNP Silicon Digital Transistor Array |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R. ues typ. max. Unit V(BR)CEO 50 4.7 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Base-emitter breakdown voltage V(BR)EBO 5 IE = 10 µA, IC = 0 Collector cutoff current ICBO 100 nA 120 630 V 0.3 0.8 1.1 6.2 kΩ VCB = 40 V, IE = 0 DC current gain hFE . |