| Overview |
BCR169.../SEMB3
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal iso.
CR169T, TS ≤ 109°C BCR169U, TS ≤ 118°C BCR169W, TS ≤ 124°C SEMB3, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR169 BCR169F BCR169L3 BCR169S BCR169T BCR169U BCR169W SEMB3
1For calculation of R thJA please refer to Application Note Th.
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