| Part Number | BCR183W Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | BCR183... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal. 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 20 10. |
BCR183W Datasheet and Specifications PDF
The BCR183W is a PNP Silicon Digital Transistor.
| Part Number | BCR183W Datasheet |
|---|---|
| Description | PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BCR 183W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10kΩ) Type BCR 183W Marking Ordering Code WMs Q62702-C22. breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 0.75 30 V 0.3 1.5 2.5 13 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC. |