| Overview |
BCR 185S
PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in biase resistor (.
ltage Values typ. max. Unit
V(BR)CEO
50 10 0.21 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 167 70 V 0.3 1 1.4 13 0.24 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.5
VEB = 6 V, I.
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