| Part Number | BCR196W Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
BCR196...
PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ , R2 = 22kΩ )
BCR196/F/L3 BCR196T/W
C 3
R1 R2
1 B
2 E
.
W
Tj Tstg Symbol RthJS
150 150 * -65 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 °C Unit K/W 2 Aug-29-2003 BCR196 * Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC . |
BCR196W Datasheet and Specifications PDF
The BCR196W is a PNP Silicon Digital Transistor.
| Part Number | BCR196W Datasheet |
|---|---|
| Description | PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BCR 196W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=22kΩ) Type BCR 196W Marking Ordering Code WXs UPON INQU. se breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 220 50 V 0.3 2.6 4 62 2.36 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 1.2 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) I. |