| Part Number | BCR198S Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | BCR198S PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, 4 5 6 driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package. min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 5 mA, V. |
BCR198S Datasheet and Specifications PDF
The BCR198S is a PNP Silicon Digital Transistor Array.
| Part Number | BCR198S Datasheet |
|---|---|
| Description | PNP Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit) |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BCR 198S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R. tage Values typ. max. Unit V(BR)CEO 50 47 1 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 1.5 3 62 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = . |