BCV49 Datasheet and Specifications PDF

The BCV49 is a NPN Silicon Darlington Transistors.

Datasheet4U Logo
Part NumberBCV49 Datasheet
ManufacturerInfineon
Overview NPN Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV28, BCV48 (PNP) • Pb-free (RoHS compliant) package • Qualified a. TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCV29 IC = 10 mA, IB = 0 , BCV49 V(BR)CEO 30 60 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCV29 IC = 100 µA, IE = 0 , B.
Part NumberBCV49 Datasheet
DescriptionNPN Darlington transistors
ManufacturerNXP Semiconductors
Overview NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48. 1 2 3 handbook, halfpage BCV29; BCV49 PINNING PIN 1 2 3 emitter collector base DESCR.
* High current (max. 500 mA)
* Low voltage (max. 60 V)
* High DC current gain (min. 20000). APPLICATIONS
* Preamplifier input applications. DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48. 1 2 3 handbook, halfpage BCV29; .
Part NumberBCV49 Datasheet
DescriptionNPN Silicon Darlington Transistors
ManufacturerSiemens Semiconductor Group
Overview NPN Silicon Darlington Transistors BCV 29 BCV 49 For general AF applications q High collector current q High current gain q Complementary types: BCV 28, BCV 48 (PNP) q Type BCV 29 BCV 49 Marking E. istics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCV 29 BCV 49 Collector-base breakdown voltage IC = 100 µA BCV 29 BCV 49 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 30 V VCB = 60 V.
Part NumberBCV49 Datasheet
DescriptionNPN SILICON PLANAR DARLINGTON TRANSISTOR
ManufacturerZetex Semiconductors
Overview SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – PARTMARKING DETAILS – BCV48 EG BCV49 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Vo. I C=100mA, V CE=5V* I C=500mA, V CE=5V* I C=50mA, V CE=5V f = 20MHz V CB=10V, f=1MHz Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V CE(sat) V BE(sat) Static Forward Current h FE Transfer Ratio Transition Frequency Output Capacitance fT C obo .