BCW66 Datasheet

The BCW66 is a NPN Silicon AF Transistor.

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Part NumberBCW66
ManufacturerInfineon
Overview BCW65, BCW66 NPN Silicon AF Transistor  For general AF applications  High current gain  Low collector-emitter saturation voltage  Complementary types: BCW67, BCW68 (PNP) 3 2 1 VPS05161 Type BCW. at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 32 V, IE = 0 VCB = 45.
Part NumberBCW66
Description800mA NPN general-purpose transistor
ManufacturerNexperia
Overview NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 . and benefits
* High current
* AEC-Q101 qualified 3 Applications
* General-purpose switching and amplification 4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO IC ICM hFE collector-emitter voltage collector current peak collector current DC current gain BCW66F BCW66G.
Part NumberBCW66
DescriptionSILICON NPN TRANSISTORS
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR BCW65 and BCW66 series devices are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpos. , TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=500mA, IB=50mA fT VCE=5.0V, IC=50mA, f=20.
Part NumberBCW66
DescriptionNPN Transistor
ManufacturerKexin Semiconductor
Overview SMD Type Transistors NPN Transistors BCW66 (KCW66) ■ Features ● BCW66 is subdivided into three groups F,G and H according to DC current gain ● Complementary to BCW68 +0.22.8 -0.1 SOT-23-3 2.9 +0.2.
* BCW66 is subdivided into three groups F,G and H according to DC current gain
* Complementary to BCW68 +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 1. Base 2. Emitter 3. Collector 0-0.1 +0.10..

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