| Part Number | BCY78 Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview |
PNP switching transistor in a TO-18 metal package. NPN complements: BCY58 and BCY59.
3
BCY78; BCY79
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
1 handbook, halfpage 2
3 .
* Low current (max. 100 mA) * Low voltage (max. 45 V). APPLICATIONS * Switching and amplification. DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: BCY58 and BCY59. 3 BCY78; BCY79 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 1 handbook, hal. |
BCY78 Datasheet and Specifications PDF
The BCY78 is a PNP switching transistors.
| Part Number | BCY78 Datasheet |
|---|---|
| Description | (BCY78 / BCY79) SILICON PLANAR EPITAXIAL TRANSISTORS |
| Manufacturer | Comset Semiconductors |
| Overview |
PNP BCY78 – BCY79 SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY78 and BCY79 are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are designed for use in au.
ONDUCTORS
1/4
Datasheet pdf -
PNP BCY78 * BCY79 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol ICES Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Emitter Base Breakdown Volt. |
| Part Number | BCY78 Datasheet |
|---|---|
| Description | PNP SILICON PLANAR TRANSISTORS |
| Manufacturer | Siemens Semiconductor Group |
| Overview | . . |
| Part Number | BCY78 Datasheet |
|---|---|
| Description | SILICON PNP TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR BCY78 and BCY79 series types are silicon PNP epitaxial planar transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applic. A=150°C IEBO VEB=5.0V BVCBO IC=10μA (BCY78) 32 BVCBO IC=10μA (BCY79) 45 BVCEO IC=2.0mA (BCY78) 32 BVCEO IC=2.0mA (BCY79) 45 BVEBO IE=1.0μA 5.0 VCE(SAT) IC=10mA, IB=250μA VCE(SAT) IC=100mA, IB=2.5mA VBE(SAT) IC=10mA, IB=250μA 0.60 VBE(SAT) IC=100mA, IB=2.5mA 0.70 VBE(ON) VCE=. |