BD240A Datasheet and Specifications PDF

The BD240A is a PNP Epitaxial Silicon Transistor.

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Part NumberBD240A Datasheet
ManufacturerFairchild Semiconductor
Overview BD240/A/B/C BD240/A/B/C Medium Power Linear and Switching Applications • Complement to BD239/A/B/C respectively 1 TO-220 PNP Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute M. : BD240 : BD240A : BD240B : BD240C Emitter Cut-off Current * DC Current Gain VCE(sat) * Collector-Emitter Saturation Voltage VBE(on) * Base-Emitter ON Voltage * Pulse Test: PW=350µs, duty Cycle≤2.0% Pulsed VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = .
Part NumberBD240A Datasheet
DescriptionPNP SILICON POWER TRANSISTORS
ManufacturerBourns
Overview BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD241 Series ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 4 A Peak Collec. D240C BD240 BD240A BD240B BD240C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL -55 -70 V -90 -115 -45 -60 V -80 -100 -5 V -2 A -4 A -0.6 A 30 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate l.
Part NumberBD240A Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220C package ·Complement to type BD239/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base . 0 BD240B BD240C -80 -100 IC=-1 A;IB=-0.2 A IC=-1A ; VCE=-4V BD240/A VCE=-30V; IB=0 -0.3 BD240B/C BD240 BD240A VCE=-60V; IB=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 -0.2 BD240B BD240C VCE=-80V; VBE=0 VCE=-100V; VBE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V IC=-1A ; VCE=-4V 40 15 -1 mA mA mA -0.7 -1.3 V V CONDITION.
Part NumberBD240A Datasheet
DescriptionMedium Power Linear/Switching
ManufacturerComset Semiconductors
Overview PNP BD240 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD239, A, B, C are mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in m. °C/W °C/W 22/10/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - PNP BD240
* A
* B
* C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE=-30 V VCE=-30 V VCE=-60 V VCE=-60 V Min -45 -60 -80 -100 40 Typ - Max Unit IC.