| Part Number | BD244A Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | BD244/A/B/C BD244/A/B/C Medium Power Linear and Switching Applications • Complement to BD243, BD243A, BD243B and BD243C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Tr. n IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 0.7 - 0.7 - 0.4 - 0.4 - 0.4 - 0.4 -1 30 15 - 1.5 -2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, . |
BD244A Datasheet and Specifications PDF
The BD244A is a PNP Epitaxial Silicon Transistor.
| Part Number | BD244A Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD243; -60V(Min)- BD243A -80V(Min)- BD243B; -100V(Min)- BD243C ·Complement to Type BD243/A/B/C. h j-c Thermal Resistance, Junction to Case 1.92 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD244/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD244 VCEO(SUS) Collector-Emitter S. |
| Part Number | BD244A Datasheet |
|---|---|
| Description | PNP SILICON POWER TRANSISTORS |
| Manufacturer | Power Innovations Limited |
| Overview | BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD243 Series 65 W. ture range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -6 -10 -3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This valu. |
| Part Number | BD244A Datasheet |
|---|---|
| Description | Silicon PNP Power Transistors |
| Manufacturer | Comset Semiconductors |
| Overview | BD244 – A – B – C SILICON PNP POWER TRANSISTORS The BD244 series are PNP power transistors in a TO-220 envelope. They are intended for use in medium power linear and switching applications. The comple. ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCE VCE VCE VCE Test Condition(s) Min Typ Max Unit ICES Collector- Emitter Cutoff Current = -45 V , VBE = 0 = -60 V , VBE = 0 = -80 V , VBE = 0 = -100 V , VBE = 0 ICEO IEBO VCEO Collector Cut-off Current VCE = -30. |