| Part Number | BD311 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Complement to Type BD312 ·Minimum Lot-to-Lot variations fo. Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A VB. |
BD311 Datasheet
The BD311 is a NPN Transistor.
| Part Number | BD311 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD312 APPLICATIONS ·Designed for power amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig. om Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A . |