| Part Number | BD330 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·DC Current Gain- : hFE= 85~375(Min)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -20V(Min) ·Complement to type BD329 ·Minimum Lot-to-Lot variations for robust device performance an. HARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -20 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -0.5 V VBE(on)-1 Base-Emitter On Voltage IC= -5mA; VCE= -10. |
BD330 Datasheet PDF
The BD330 is a Silicon PNP Power Transistor.
| Part Number | BD330 Datasheet |
|---|---|
| Description | PNP power transistor |
| Manufacturer | NXP Semiconductors |
| Overview | Philips Semiconductors Small-signal Transistors LEADED DEVICES (continued) PNP GENERAL PURPOSE POWER TRANSISTORS TYPE NUMBER BD132 BD136 BD136-10 BD136-16 BD138 BD138-10 BD138-16 BD140 BD140-10 BD140. fT min. (MHz) 60 Selection guide NPN COMPL. BD131 PAGE 474 480 480 480 480 480 480 480 480 480 486 486 486 492 498 498 498 498 498 498 498 498 498 160 typ. BD135 160 typ. BD135-10 160 typ. BD135-16 160 typ. BD137 160 typ. BD137-10 160 typ. BD137-16 160 typ. BD139 160 typ. BD139-10 160 typ. BD139. |