BD380 Datasheet and Specifications PDF

The BD380 is a PNP Epitaxial Silicon Transistor.

Key Specifications

PackageTO-126
Mount TypeThrough Hole
Pins3
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberBD380 Datasheet
ManufacturerFairchild Semiconductor
Overview BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unles. -2 -2 -2 - 100 40 20 375 -1 - 1.5 50 500 V V ns ns Typ. Max. Units V V V V V V µA µA µA µA BVCBO IC = - 100µA, IE = 0 ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.15A VCE = - 2V, IC = - 1A IC = - 1A, IB = - 0.1A VCE = - 2V, IC = -1A VCC.
Part NumberBD380 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·DC Current Gain- : hFE= 20(Min)@ IC= -1A ·Complement to Type BD375/377/379 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power. US) Collector-Emitter Sustaining Voltage BD376 BD378 BD380 IC= -30mA ; IB= 0 BD376 VCBO Collector-Base Voltage BD378 IC= -0.1mA ; IE= 0 BD380 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V BD376 VCB= -45V; IE= 0 ICBO Co.

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