| Part Number | BD643 Datasheet |
|---|---|
| Manufacturer | Comset Semiconductors |
| Overview | SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended. 651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range Limiting values in . |
BD643 Datasheet and Specifications PDF
The BD643 is a SILICON DARLINGTON POWER TRANSISTORS.
Key Specifications
| Package | LFQFP |
|---|---|
| Mount Type | Surface Mount |
| Pins | 64 |
| Operating Voltage | 3.3 V |
| Max Voltage (typical range) | 3.6 V |
| Min Voltage (typical range) | 3 V |
| Max Frequency | 25 MHz |
| Height | 1.45 mm |
| Part Number | BD643 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Complement to type BD644 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING. heet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current. |
| Part Number | BD643 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD644 ·Minimum Lot-to-Lot variations for robust dev. Ambient 70 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD643 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(. |