| Part Number | BD644 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD643 ·Minimum Lot-to-Lot variations for robust d. tion to Ambient 70 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD644 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Vo. |
BD644 Datasheet and Specifications PDF
The BD644 is a Silicon PNP Darlington Power Transistor.
Key Specifications
| Package | LFQFP |
|---|---|
| Pins | 64 |
| Operating Voltage | 3.3 V |
| Max Voltage (typical range) | 3.6 V |
| Min Voltage (typical range) | 1.8 V |
| Max Frequency | 25 MHz |
| Length | 10 mm |
| Width | 10 mm |
| Part Number | BD644 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Comset Semiconductors |
| Overview | SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intende. BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range Limiting v. |