BD801 Datasheet
BD801 Datasheet (Motorola Semiconductor)
Motorola Semiconductor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD801/D Plastic High Power Silicon NPN Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi.
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BD801 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Saturation Voltage ·Complement to Type BD802 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP.
Silicon NPN Power Transistor BD801 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1 V VBE(on) .