BD808 Datasheet
BD808 Datasheet (Motorola Semiconductor)
Motorola Semiconductor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD808/D Plastic High Power Silicon PNP Transistor . . . designed for use in high power audio amplifiers utilizing complementary or quasi.
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BD808 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·DC Current Gain - : hFE =30@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·Complement to Type BD807 ·Minimum Lot-to-Lot variations for robust device performance and reliable .
C=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -2V ICBO Collector Cutoff Current VCB= -70V; IE= 0 I.