Part Number	BD843 Datasheet
Manufacturer	Inchange Semiconductor
Overview	·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD844 ·Minimum Lot-to-Lot variations for robust device performance and reli. mi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD843 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A.