| Part Number | BD901 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement. nction to Ambient 62.5 ℃/W BD901 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD901 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Brea. |
BD901 Datasheet
The BD901 is a NPN Transistor.
| Part Number | BD901 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Complement to type BD896/898/900/902 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applicat. voltage BD897 IC=100mA, IB=0 BD899 BD901 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD895 BD897 ICBO Collector cut-off current BD899 BD901 BD895 BD897 ICEO Collector cut-off current BD899 BD901 IEBO hFE VEC ton toff Emitter cut-off current DC current gain Diode forward v. |
| Part Number | BD901 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Bourns |
| Overview | BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 70 W at 25°C Case Temperature 8 A Continuous C. emperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TA Tj Tstg VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 8 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION 1 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change withou. |