BD902 Datasheet

The BD902 is a PNP Transistor.

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Part NumberBD902
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Compleme. Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD902 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitt.
Part NumberBD902
DescriptionPNP Transistor
ManufacturerPower Innovations Limited
Overview BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BD895, BD897, BD899 an. the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot TA Tj Tstg VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION Informatio.
Part NumberBD902
DescriptionSilicon NPN Power Transistors
ManufacturerComset Semiconductors
Overview SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended. BD898
* BD900
* BD902 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=25°C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=100° C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0, VCE = - 30 V.
Part NumberBD902
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220C package ·Complement to type BD895/897/899/901 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment, general amplifier,and analogue switching applicat. breakdown voltage BD898 IC=-100mA, IB=0 BD900 BD902 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896 BD898 ICBO Collector cut-off current BD900 BD902 BD896 BD898 ICEO Collector cut-off current BD900 BD902 IEBO hFE VEC ton toff Emitter cut-off current DC current gain Dio.