BD907 Datasheet and Specifications PDF

·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Complement to Type BD908 ·Minimum Lot-to-Lot variations for robust device performance and reliable.

25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage.

The BD707, BD709, and BD711 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in power linear and switching applications. The complementary PNP types a.

hj-ca se Thermal Resistance Junction-case Max 1. 67 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol ICBO Parameter Collector Cut-off Current (IE = 0) ICEO Collector Cut-off Current (IB = 0) IEBO Emitter Cut- off Current (IC = 0) VCEO(sus)∗ Collector-Emitt.

SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Emitter and Collector Current Base Current Total Power Dissipation up to Tc=25oC Junction Temperature Temperature Rang.

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