| Part Number | BDV64C Datasheet |
|---|---|
| Manufacturer | Power Innovations Limited |
| Overview | BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDV65, BDV65A, BDV65B. seconds NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10% 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. V EBO IC ICM IB Ptot Ptot Tj Tstg TL VCEO VCBO SYMBOL VALUE -60 -80 -100 -120 -60 -8. |
BDV64C Datasheet and Specifications PDF
The BDV64C is a PNP Transistor.
| Part Number | BDV64C Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. PINNING PIN 1 2 3 Base. =25 unless otherwise specified PARAMETER BDV64 Collector-emitter breakdown voltage BDV64A IC=-30mA, IB=0 BDV64B BDV64C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BDV64 Collector cut-off current BDV64A BDV64B BDV64C BDV64 Collector cut-off current BDV64A BDV64B BDV64C IEB. |
| Part Number | BDV64C Datasheet |
|---|---|
| Description | Silicon PNP Darlington Power Transistor |
| Manufacturer | Comset Semiconductors |
| Overview | BDV64-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applic. PT Power Dissipation Tmb = 25° C W 3.5 TJ Junction Temperature 150 °C -65 to +150 TS Storage Temperature THERMAL CHARACTERISTICS Symbol Rthj-c Ratings Thermal Resistance, Junction to Case BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C Value 1 Unit °C / W 35.7 . |
| Part Number | BDV64C Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and re. emark isc Silicon PNP Darlington Power Transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX UNIT 1.0 ℃/W 35.7 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CON. |