| Part Number | BDV66B Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and r. X UNIT 0.625 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDV66/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV66 VCEO(SUS) Collector-Emitter Sustaining Voltage BDV66. |
BDV66B Datasheet and Specifications PDF
The BDV66B is a Silicon PNP Darlington Power Transistor.
| Part Number | BDV66B Datasheet |
|---|---|
| Description | PNP Darlington Power Transistor |
| Manufacturer | Comset Semiconductors |
| Overview | BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applic. atts TJ Junction Temperature 150 °C -65 to +150 TS Storage Temperature THERMAL CHARACTERISTICS Symbol Rthj-c Ratings Thermal Resistance, Junction to Case Value 0.625 Unit °C / W SWITCHING TIMES Symbol ton toff Ratings turn-on time turn-off time Test Condition(s) Min I. |