| Part Number | BDW63D Datasheet |
|---|---|
| Manufacturer | Power Innovations Limited |
| Overview | BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS Copyright © 1997 Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW64, BDW64. rature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEB IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 6 0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is op. |
BDW63D Datasheet and Specifications PDF
The BDW63D is a NPN Transistor.
Key Specifications
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BDW63D Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min.)@ IC= 2A ·Complement to Type BDW64/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI. mal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS BDW63 V(BR). |