| Part Number | BDW64B Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min.)@ IC= -2A ·Complement to Type BDW63/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA. e Rth j-c Thermal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW64 V(BR)C. |
BDW64B Datasheet and Specifications PDF
The BDW64B is a PNP Transistor.
| Part Number | BDW64B Datasheet |
|---|---|
| Description | PNP SILICON POWER DARLINGTONS |
| Manufacturer | Power Innovations Limited |
| Overview | BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW63, BDW6. erature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -6 -0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emi. |