| Part Number | BDW73 Datasheet |
|---|---|
| Manufacturer | Power Innovations Limited |
| Overview | BDW73, BDW73A, BDW73B, BDW73C, BDW73D NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW74, BDW7. erature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 8 0.3 80 2 75 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is. |
BDW73 Datasheet and Specifications PDF
The BDW73 is a NPN SILICON POWER DARLINGTON.
| Part Number | BDW73 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 750(Min.)@ IC= 3A ·Complement to Type BDW74/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI. /W Rth j-c Thermal Resistance, Junction to Case 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW73 V(BR)CEO Collector-Emitt. |