BDW74A Datasheet
BDW74A Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector Current -IC= -8A ·High DC Current Gain-hFE= 750(Min.)@ IC= -3A ·Complement to Type BDW73/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA.
l Resistance, Junction to Case isc website： MAX UNIT 1.56 ℃/W 62.5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW74 BDW74/A/B/C/D MIN TYP. -.
BDW74A Datasheet (Power Innovations Limited)
Power Innovations Limited
BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW73, BDW7.
erature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -8 -0.3 80 2 75 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emi.