| Part Number | BDW94C |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applica. Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-of. |
BDW94C Datasheet
The BDW94C is a COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS.
| Part Number | BDW94C |
|---|---|
| Description | PNP Epitaxial Silicon Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively January 2. . |
| Part Number | BDW94C |
|---|---|
| Description | Darlington Transistors |
| Manufacturer | Multicomp |
| Overview |
Darlington Transistors
BDW93, BDW94 Series
Features:
Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - B.
Designed for general-purpose amplifier and low speed switching applications * Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C * Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A * Monolithic construction wit. |
| Part Number | BDW94C |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= -12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW94; -60V(Min)- BDW94A -80V(Min)- BDW94B; -100V(Min)- BDW94C ·Complement to Type BDW93/A/B/C ·Minimum Lot. nce, Junction to Case isc website：www.iscsemi.com MAX 1.5 UNIT ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW94 CONDITIONS VCEO(SUS) Collector-Emitter S. |