| Part Number | BDX64B Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDX65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI. com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX64 -60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX64A BDX64B IC= -50. |
BDX64B Datasheet and Specifications PDF
The BDX64B is a Silicon PNP Darlington Power Transistor.
| Part Number | BDX64B Datasheet |
|---|---|
| Description | Silicon PNP Darlington Power Transistor |
| Manufacturer | Comset Semiconductors |
| Overview | BDX64 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and s. s otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) IC=-0.1 A IB=0 L=25mH VCE=-30 V VCE=-40 V VCE=-50 V VCE=-60 V VBE=-5 V VCBO=-60 V VCBO=-40 V TCASE=200°C Min -60 -80 -100 -120 - Typ - Max -1.0 Unit VCEO(SUS) ICEO Collector Cutoff. |
| Part Number | BDX64B Datasheet |
|---|---|
| Description | Bipolar PNP Device |
| Manufacturer | Seme LAB |
| Overview | BDX64B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.. otice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co. |