BDX85B Datasheet
BDX85B Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High DC Current Gain- : hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C ·Complement to Type BDX86/A/B/.
to Case MAX UNIT 1.75 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX85/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX85 VCEO(SUS) Collector-Emitter Sustaining Vo.
BDX85B Datasheet (Seme LAB)
Seme LAB
BDX85B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package..
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