BDX88 Datasheet
BDX88 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High DC Current Gain- : hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C ·Complement to Type BDX87.
ance,Junction to Case MAX UNIT 1.45 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX88/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX88 -45 VCEO(S.
BDX88 Datasheet (STMicroelectronics)
STMicroelectronics
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BDX88 Datasheet (Seme LAB)
Seme LAB
BDX88 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package..
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