BDX88B Datasheet
BDX88B Datasheet (STMicroelectronics)
STMicroelectronics
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BDX88B Datasheet (Seme LAB)
Seme LAB
BDX88B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
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BDX88B Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High DC Current Gain- : hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C ·Complement to Type BDX87.
ance,Junction to Case MAX UNIT 1.45 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX88/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX88 -45 VCEO(S.